Si-based metal–semiconductor–metal photodetectors with various design modifications
- 31 January 2007
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 51 (1), 94-101
- https://doi.org/10.1016/j.sse.2006.11.006
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- A PMOS tunneling photodetectorIEEE Transactions on Electron Devices, 2001
- High performance superlattice coupled quantum well infrared photodetector for long wavelength infrared detectionElectronics Letters, 2001
- Cryogenic processed metal-semiconductor-metal (MSM) photodetectors on MBE grown ZnSeIEEE Transactions on Electron Devices, 1999
- Novel metal-semiconductor-metal photodetectors on bulk semi-insulating indium phosphideIEEE Photonics Technology Letters, 1997
- Bandwidth enhancement in silicon metal-semiconductor-metal photodetector by trench formationIEEE Photonics Technology Letters, 1996
- Temporal and spectral characteristics of back-illuminated InGaAs metal-semiconductor-metal photodetectorsIEEE Photonics Technology Letters, 1996
- Epitaxial liftoff InGaAs/InP MSM photodetectors on SiElectronics Letters, 1995
- Barrier height enhancement of Schottky diodes on n-In0.53Ga0.47As by cryogenic processingApplied Physics Letters, 1993
- High-performance back-illuminated InGaAs/InAlAs MSM photodetector with a record responsivity of 0.96 A/WIEEE Photonics Technology Letters, 1992
- High-performance Al/sub 0.15/Ga/sub 0.85/As/In/sub 0.53/Ga/sub 0.47/As MSM photodetectors grown by OMCVDIEEE Transactions on Electron Devices, 1989