100 ps precessional spin-transfer switching of a planar magnetic random access memory cell with perpendicular spin polarizer
- 17 August 2009
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 95 (7), 072506
- https://doi.org/10.1063/1.3206919
Abstract
Ultrafast spin-transfer precessional switching between two stable states of a magnetic random access memory device is demonstrated in structures comprising a perpendicularly magnetized polarizing layer ( PL ⊥ ) , an in-plane magnetized free layer (FL), and an in-plane magnetized analyzing layer (AL) in a PL ⊥ /spacer/FL/spacer/AL stack. Back and forth switching can be achieved with sub-ns current pulses of the same polarity. The spin-torque influence from the analyzer leads to an asymmetric dependence of the switching properties as a function of the current sign and initial state.Keywords
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