Substrate nitridation effect and low temperature growth of GaN on sapphire (0 0 0 1) by plasma-excited organometallic vapor-phase epitaxy
- 1 January 1998
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 183 (1-2), 62-68
- https://doi.org/10.1016/s0022-0248(97)00400-4
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
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