Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire
- 25 September 2012
- journal article
- conference paper
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 370, 63-67
- https://doi.org/10.1016/j.jcrysgro.2012.08.048
Abstract
No abstract availableKeywords
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