Extremely uniform, reproducible growth of device quality InGaAsP:InP heterostructures in the T-shaped reactor at atmospheric pressure
- 1 January 1988
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 93 (1-4), 235-241
- https://doi.org/10.1016/0022-0248(88)90533-7
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Instrumental aspects of atmospheric pressure MOVPE growth of InP and InP: GaInAsP heterostructuresJournal of Crystal Growth, 1986
- The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindiumJournal of Electronic Materials, 1986
- The interpretation of X-ray rocking curves from III–V semiconductor device structuresJournal of Crystal Growth, 1984