High Quantum Efficiency, High Output Power 1.3 µm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes
- 1 April 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (4A), L661-663
- https://doi.org/10.1143/jjap.28.l661
Abstract
We have fabricated a high quantum efficiency (40%/facet), low internal loss (5 cm-1), high output power (62 mW/facet) 1.3 µm GaInAsP buried graded-index separate-confinement-heterostructure multiple quantum well (GRIN-SCH-MQW) laser diode entirely grown by metalorganic chemical vapor deposition (MOCVD). This laser diode operated in a single longitudinal mode in a relatively wide temperature range of 35°C without any mode hopping. The minimum spectral linewidth of 2.3 MHz was realized at an output power of 7 mW for a laser diode with cavity length of 900 µm. The beam divergence angle is considerably smaller than that of the conventional DH laser diodes.Keywords
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