Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser
- 23 November 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (21), 1744-1746
- https://doi.org/10.1063/1.98510
Abstract
The structure and properties of a high performance InGaAs/InGaAsP separate confinement heterostructure multiple quantum well laser operating at 1.54 μm are described. The laser has low threshold current (18 mA), high quantum efficiency (22% facet), high cw output power (42 mW/facet), and weak dependence of the threshold currents and efficiencies on cavity length.Keywords
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