Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes
- 21 October 2011
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 11 (11), 5008-5012
- https://doi.org/10.1021/nl2030322
Abstract
Nanoscale size effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5–50 nm. First, optical absorption studies are performed by transferring InAs “quantum membranes” (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field and thickness dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance toward establishing the fundamental device physics of two-dimensional semiconductors.Keywords
This publication has 26 references indexed in Scilit:
- Synthesis, assembly and applications of semiconductor nanomembranesNature, 2011
- Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic ApplicationsIEEE Transactions on Electron Devices, 2010
- Photo-Thermoelectric Effect at a Graphene Interface JunctionNano Letters, 2009
- Energy Band-Gap Engineering of Graphene NanoribbonsPhysical Review Letters, 2007
- The rise of grapheneNature Materials, 2007
- Two- versus three-dimensional quantum confinement in indium phosphide wires and dotsNature Materials, 2003
- AlGaN/GaN HEMTs on (111) silicon substratesIEEE Electron Device Letters, 2002
- Control of structural defects in group III V N alloys grown on SiSemiconductor Science and Technology, 2002
- Artificial Atoms: New Boxes for ElectronsScience, 1997
- Low-dimensional systems: quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systemsAdvances in Physics, 1993