Crystallisation kinetics and density profiles in ultra-thin hafnia films
- 1 May 2004
- journal article
- Published by Springer Science and Business Media LLC in Zeitschrift für Physik B Condensed Matter
- Vol. 39 (2), 273-277
- https://doi.org/10.1140/epjb/e2004-00190-1
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- X-Ray reflectivity and spectroscopic ellipsometry as metrology tools for the characterization of interfacial layers in high-κ materialsThin Solid Films, 2004
- Chlorine mobility during annealing in N2 in ZrO2 and HfO2 films grown by atomic layer depositionJournal of Applied Physics, 2002
- SIMS depth profiling of ultrashallow P, Ge and As implants in Si using MCs2+ ionsSurface and Interface Analysis, 2002
- Experimental observations of the thermal stability of high-k gate dielectric materials on siliconJournal of Non-Crystalline Solids, 2002
- In situ crystallisation in ZrO2 thin films during high temperature X-ray diffractionMicroelectronics Reliability, 2001
- Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperaturesApplied Surface Science, 2001
- Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer depositionJournal of Crystal Growth, 2000
- Influence of substrate temperature on atomic layer growth and properties of HfO2 thin filmsThin Solid Films, 1999
- Extraction of density profile for near perfect multilayersPhysical Review B, 1998
- Determination of small fluctuations in electron density profiles of thin films: Layer formation in a polystyrene filmEurophysics Letters, 1996