Formation of a high quality two-dimensional electron gas on cleaved GaAs
- 23 April 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (17), 1697-1699
- https://doi.org/10.1063/1.103121
Abstract
We have succeeded in fabricating a two‐dimensional electron gas (2DEG) on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE). A (100) wafer previously prepared by MBE growth is reinstalled in the MBE chamber so that an in situ cleave exposes a fresh (110) GaAs edge for further MBE overgrowth. A sequence of Si‐doped AlGaAs layers completes the modulation‐doped structure at the cleaved edge. Mobilities as high as 6.1×105 cm2/V s are measured in the 2DEG at the cleaved interface.Keywords
This publication has 6 references indexed in Scilit:
- Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAsApplied Physics Letters, 1989
- Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxyApplied Physics Letters, 1987
- Growth and properties of AlGaAs/GaAs heterostructures on GaAs (110) surfaceJournal of Crystal Growth, 1987
- Growth of (110) GaAs/GaAs by Molecular Beam EpitaxyMRS Proceedings, 1985
- Instabilities of (110) III–V compounds grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1983
- Quantized magnetoresistance in two-dimensional electron systemsPhysical Review B, 1983