Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAs
- 30 October 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (18), 1888-1890
- https://doi.org/10.1063/1.102162
Abstract
A modulation‐doped Al0.35Ga0.65As/GaAs single interface structure with a 700 Å undoped setback grown by solid‐source molecular beam epitaxy (MBE) shows a Hall mobility of 11.7×106 cm2/V s at a carrier density of 2.4×1011 electrons/cm2 measured in van der Pauw geometry after exposure to light at 0.35 K. This is the highest carrier mobility ever measured in a semiconductor. Similar Al0.32Ga0.68As/GaAs structures with 1000–2000 Å setbacks show Hall mobilities in the dark at 0.35 K as high as 4.9×106 cm2 /V s for carrier densities of 5.4×1010 electrons/cm2 and lower.Keywords
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