In situ deposition of epitaxial PbZrxTi(1−x)O3 thin films by pulsed laser deposition

Abstract

Epitaxial thin films of PbZr_xTi_(1−x)O₃ (PZT) with 0≤x≤0.6 have been deposited in situ by pulsed laser deposition from stoichiometric targets onto 〈100〉 oriented single crystals of MgO and SrTiO₃. Film composition was extremely sensitive to the substrate temperature and the oxygen deposition pressure. In a high (200–300 mTorr) oxygen ambient, phase‐pure 〈100〉 oriented PZT films (x=0.54) were formed at a substrate temperature of 550 °C on SrTiO₃. On MgO, competition between formation of the ferroelectric phase and a nonferroelectric (pyrochlore) phase was observed for compositions near the morphotropic phase boundary (x∼0.54). Polycrystalline PZT films which were 70%–90% PZT were also deposited on Pt coated Si and GaAs under similar conditions.