Pulsed laser deposition and ferroelectric characterization of bismuth titanate films
- 8 April 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (14), 1470-1472
- https://doi.org/10.1063/1.105200
Abstract
Stoichiometric films of bismuth titanate, Bi4Ti3O12, have been grown for the first time by the technique of pulsed excimer laser deposition. Ferroelectric films were obtained at temperatures as low as 500 °C on Si(100), MgO(110), and Pt-coated Si(100) substrates. Hysteresis measurements using a Pt-coated Si sample yielded a saturation polarization value of about 28 μC/cm2, consistent with a randomly oriented titanate film structure. A preliminary metal-insulator-semiconductor sandwich structure of the form Bi4Ti3O12-CaF2(100 Å)-Si was grown and used to examine polarization induced memory switching effects.Keywords
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