An Integrated ISFET Sensor Array
Open Access
- 4 November 2009
- Vol. 9 (11), 8831-8851
- https://doi.org/10.3390/s91108831
Abstract
A monolithically integrated ISFET sensor array and interface circuit are described. A new high-density, low-power source-drain follower was developed for the sensor array. ISFETs were formed by depositing Au/Ti extended-gate electrodes on standard MOSFETs, then thin silicon nitride layers using catalytic chemical vapor deposition and/or SU-8 protective layers were formed on the extended-gate electrodes. Applications for the array include: (1) pH detection by statistical distribution observing time and space fluctuations; (2) DNA detection using thiol-modified or silane-coupled oligonucleotides; (3) bio-image sensing by converting photons to electrons using Photosystem I of Thermosynechococcus elongatus, and sensing the converted electric charges by ISFETs.Keywords
This publication has 37 references indexed in Scilit:
- Label free CMOS DNA image sensor based on the charge transfer techniqueBiosensors and Bioelectronics, 2009
- Real-time, multiplexed electrochemical DNA detection using an active complementary metal-oxide-semiconductor biosensor array with integrated sensor electronicsBiosensors and Bioelectronics, 2009
- A CMOS neuroelectronic interface based on two-dimensional transistor arrays with monolithically-integrated circuitryBiosensors and Bioelectronics, 2009
- A Core-CBCM sigma delta capacitive sensor array dedicated to lab-on-chip applicationsSensors and Actuators A: Physical, 2008
- Tracking cancer cell proliferation on a CMOS capacitance sensor chipBiosensors and Bioelectronics, 2008
- Matching the Transconductance Characteristics of CMOS ISFET Arrays by Removing Trapped ChargeIEEE Transactions on Electron Devices, 2008
- A Fully Electronic Label-Free DNA Sensor ChipIEEE Sensors Journal, 2007
- New ISFET interface circuit design with temperature compensationMicroelectronics Journal, 2006
- A fully electronic DNA sensor with 128 positions and in-pixel A/D conversionIEEE Journal of Solid-State Circuits, 2004
- Ion-sensitive field-effect transistors fabricated in a commercial CMOS technologySensors and Actuators B: Chemical, 1999