Effect of bias on the response of metal-oxide-semiconductor devices to low-energy x-ray and cobalt-60 irradiation
- 2 May 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (18), 1514-1516
- https://doi.org/10.1063/1.99116
Abstract
The response of metal-oxide-semiconductor (MOS) transistors and capacitors to high-energy Co-60 gamma and low-energy x-ray irradiation is evaluated as a function of gate bias during exposure. It is demonstrated that, in contrast to previous expectations, the relative response of MOS devices to Co-60 gamma and 10 keV x-ray irradiation cannot be explained simply in terms of electron-hole recombination and dose enhancement effects.This publication has 22 references indexed in Scilit:
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