Photoelectron Effects on the Dose Deposited in MOS Devices by Low Energy X-Ray Sources
Open Access
- 1 January 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 27 (6), 1465-1468
- https://doi.org/10.1109/tns.1980.4331052
Abstract
A method for calculating electron transport in layered materials is described. It is applied to a problem of radiation damage in MOS capacitors irradiated with a Cu x-ray tube operated at 45 kV. The effects of photoelectron transport are found to be significant. A problem of energy deposition in x-ray lithography is also discussed. The dose in the SiO2 gate is found to be about equal to that in the x-ray photoresist. Electron transport effects are found to be small in this lithography problem.Keywords
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