Stress from isolation trenches in silicon substrates
- 15 January 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (2), 1092-1101
- https://doi.org/10.1063/1.345795
Abstract
Stress from isolation trenches in silicon integrated circuits has been studied using an analytical solution that the author recently obtained for the stress problem of a parallelepipedic inclusion in a three-dimensional semispace. The origin of the stress is assumed to be the thermal mismatch between the trench fill and the silicon substrate, or equivalently the intrinsic stress of the trench fill. The effect of various trench parameters such as the trench length, width, and depth, as well as the proximity to other trenches, are investigated for a number of cases. The results are shown for all stress components in order to provide an insight into the characteristics of the trench-induced stress. There are some surprises: Some examples are the existence of a tensile pocket in the stress component normal to the trench side, and that stress components both normal and parallel to the trench increase greatly in intensity as the trench becomes shorter.Keywords
This publication has 23 references indexed in Scilit:
- Stresses in thin polycrystalline silicon filmsThin Solid Films, 1988
- Stress Effects in Boron‐Implanted Polysilicon FilmsJournal of the Electrochemical Society, 1984
- Effect of phosphorus doping on stress in silicon and polycrystalline siliconJournal of Applied Physics, 1983
- The bending of silicon wafers by thin polycrystalline silicon film deposition and by film doping using boron diffusionThin Solid Films, 1979
- The Deformation of Polycrystalline‐Silicon Deposited on Oxide‐Covered Single Crystal Silicon SubstratesJournal of the Electrochemical Society, 1977
- Stress and Thermal-Expansion Coefficient of Chemical-Vapor-Deposited Glass FilmsJournal of Applied Physics, 1970
- Effect of static uniaxial stress on the Raman spectrum of siliconSolid State Communications, 1970
- Stresses in SiO[sub 2] Films Obtained from the Thermal Decomposition of Tetraethylorthosilicate—Effect of Heat-Treatment and HumidityJournal of the Electrochemical Society, 1969
- Thermal Expansion of Sputtered Silicon Nitride FilmsJournal of the Electrochemical Society, 1969
- Thermal Expansion of SiliconJournal of Applied Physics, 1960