Enhanced Light Extraction Efficiency of GaN-Based Hybrid Nanorods Light-Emitting Diodes
- 9 January 2015
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 21 (4), 354-360
- https://doi.org/10.1109/jstqe.2015.2389529
Abstract
High light extraction GaN-based light-emitting diodes (LEDs) with a hybrid structure of straight nanorods located in an array of microholes have been successfully demonstrated. Via the nanoimprint lithography and photolithography techniques, high aspect-ratio light-guiding InGaN/GaN nanorods can be fabricated and regularly arranged in microholes, resulting in a great improvement of the light extraction for the GaN-based LED device. The light output power of the hybrid nanorods LED is 22.04 mW at the driving current standard of 25.4 A/cm 2 , an enhancement of 38.7% to the conventional GaN-based LEDs. Furthermore, with a modification of the hybrid structures' dimensions and locations, the emitted optical energy can be redistributed to obtain light-emitting devices with homogenueous optical field distributions.Keywords
Funding Information
- Ministry of Science and Technology
This publication has 33 references indexed in Scilit:
- An improvement of light extraction efficiency for GaN-based light emitting diodes by selective etched nanorods in periodic microholes.Optics Express, 2013
- Effect of ITO spreading layer on performance of blue light‐emitting diodesphysica status solidi (c), 2010
- A Reliability Study on Green InGaN–GaN Light-Emitting DiodesIEEE Photonics Technology Letters, 2009
- III-nitride photonic-crystal light-emitting diodes with high extraction efficiencyNature Photonics, 2009
- Efficiency Enhancement and Beam Shaping of GaN–InGaN Vertical-Injection Light-Emitting Diodes via High-Aspect-Ratio Nanorod ArraysIEEE Photonics Technology Letters, 2009
- Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithographyNanotechnology, 2008
- Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surfaceIEEE Photonics Technology Letters, 2005
- Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surfaceJournal of Applied Physics, 2003
- Light-emitting diode extraction efficiencyPublished by SPIE-Intl Soc Optical Eng ,1997
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992