1/f noise in polycrystalline silicon resistors

Abstract

The 1/f noise in polycrystalline silicon resistors has been measured at room temperature. The resistors were manufactured in low‐pressure chemical vapor deposition films, implanted with B, P, and As and processed in two different technologies with different temperature cycles. The spectral density was essentially independent of the type of implantation and of the processing. The results can be described with Hooge’s empirical law and Kleinpenning’s model for the 1/f noise in Schottky barriers. At low doping levels Hooge’s constant turned out to be ∼4×10⁻³ and it decreased with increasing doping concentration, more or less as (μ/μ_lattice)².