Residual strain dependence of optical characteristics in GaN layers grown on (0001) sapphire substrates
- 23 August 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (8), 1137-1139
- https://doi.org/10.1063/1.124621
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Room-temperature continuous-wave operation of GaN-based laser diodes grown by raised-pressure metalorganic chemical vapor depositionJournal of Electronic Materials, 1999
- Residual Strain Dependence of Stimulated Emission in GaN Layers Grown on (0001) Sapphire SubstratesJapanese Journal of Applied Physics, 1998
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer SuperlatticesJapanese Journal of Applied Physics, 1997
- Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substratesJournal of Applied Physics, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1993
- Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the StrainJapanese Journal of Applied Physics, 1992
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11 2̄0) and (0001) Sapphire SubstratesJapanese Journal of Applied Physics, 1988
- Study of cracking mechanism in GaN/α-Al2O3 structureJournal of Applied Physics, 1985
- Stimulated Emission and Laser Action in Gallium NitrideApplied Physics Letters, 1971