Theory, fabrication and characterization of quantum well infrared photodetectors
- 3 July 2000
- journal article
- Published by Elsevier BV in Materials Science and Engineering: R: Reports
- Vol. 28 (3-4), 65-147
- https://doi.org/10.1016/s0927-796x(00)00011-5
Abstract
No abstract availableKeywords
This publication has 94 references indexed in Scilit:
- Long-wavelength 256×256 GaAs/AlGaAs quantum well infrared photodetector (QWIP) palm-size cameraIEEE Transactions on Electron Devices, 2000
- A two-stack indirect-barrier/triple-coupled quantum well infrared detector for mid-wavelength and long-wavelength infrared dual band detectionApplied Physics Letters, 1997
- Improved performance III-V quantum well IR photodetectors: review of current and potential focal plane technologyPublished by SPIE-Intl Soc Optical Eng ,1997
- State of infrared photodetectors and materialsPublished by SPIE-Intl Soc Optical Eng ,1997
- 15-μm 128×128 GaAs/Al/sub x/Ga/sub 1-x/As quantum well infrared photodetector focal plane array cameraIEEE Transactions on Electron Devices, 1997
- Performance of generation III 640 x 480 PtSi MOS arrayPublished by SPIE-Intl Soc Optical Eng ,1994
- Quantum-well infrared photodetectorsJournal of Applied Physics, 1993
- MODTRAN2: suitability for remote sensingPublished by SPIE-Intl Soc Optical Eng ,1993
- Proposal of the Detectivity D** for Detectors Limited by Radiation Noise†Journal of the Optical Society of America, 1960
- Noise in Radiation DetectorsProceedings of the IRE, 1959