Influence of Back-Diffusion of Iron Impurity on Lifetime Distribution near the Seed-Crystal Interface in Seed Cast-Grown Monocrystalline Silicon by Numerical Modeling
- 19 December 2011
- journal article
- research article
- Published by American Chemical Society (ACS) in Crystal Growth & Design
- Vol. 12 (1), 522-525
- https://doi.org/10.1021/cg201465t
Abstract
No abstract availableKeywords
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- Structural quality of the interface seed crystal in rapidly grown KDP crystals for high-power lasersPublished by SPIE-Intl Soc Optical Eng ,1999
- An enthalpy method for convection/diffusion phase changeInternational Journal for Numerical Methods in Engineering, 1987