Low Power Mach–Zehnder Modulator in Silicon-Organic Hybrid Technology
Open Access
- 30 April 2013
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 25 (13), 1226-1229
- https://doi.org/10.1109/lpt.2013.2260858
Abstract
We report on a silicon-organic hybrid modulator based on a Mach-Zehnder interferometer (MZI) operating at 10 Gbit/s with an energy consumption of 320 fJ/bit. The device consists of a striploaded slot waveguide covered with an electro-optic polymer cladding. The MZI modulator is poled to be driven in push-pull operation by a single coplanar RF line. Our nonlinear coefficient r 33 = 15 pm/V in combination with an 80 nm narrow slot enables RF peak-to-peak drive voltages as low as 800 mV pp to suffice for an extinction ration of 4.4 dB for a 1.5 mm long modulator.Keywords
This publication has 28 references indexed in Scilit:
- Silicon Mach-Zehnder modulator of extinction ratio beyond 10 dB at 100-125 GbpsOptics Express, 2011
- 427 Gbit/s electro-optic modulator in silicon technologyOptics Express, 2011
- Low-Power 30 Gbps Silicon Microring ModulatorPublished by Optica Publishing Group ,2011
- Silicon optical modulatorsNature Photonics, 2010
- High Speed Carrier Injection 18 Gb/s Silicon Micro-ring Electro-optic ModulatorLEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, 2007
- 40 Gbit/s silicon optical modulator for high-speed applicationsElectronics Letters, 2007
- Grating Couplers for Coupling between Optical Fibers and Nanophotonic WaveguidesJapanese Journal of Applied Physics, 2006
- Strained silicon as a new electro-optic materialNature, 2006
- Electrooptic modulation of silicon-on-insulator submicrometer-size waveguide devicesJournal of Lightwave Technology, 2003
- Dielectric Breakdown in Silicon Dioxide Films on SiliconJournal of the Electrochemical Society, 1972