ONO and NO interpoly dielectric conduction mechanisms
- 1 February 1999
- journal article
- Published by Elsevier BV in Microelectronics Reliability
- Vol. 39 (2), 235-239
- https://doi.org/10.1016/s0026-2714(98)00222-4
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- SiO2- and ONO-induced substrate current in silicon field-effect transistorsSolid-State Electronics, 1998
- Temperature dependence of transport and trapping properties of oxide-nitride-oxide dielectric filmsSolid-State Electronics, 1997
- Temperature dependence of the Fowler–Nordheim current in metal-oxide-degenerate semiconductor structuresJournal of Applied Physics, 1995
- Metal-oxide-semiconductor field-effect-transistor substrate current during Fowler–Nordheim tunneling stress and silicon dioxide reliabilityJournal of Applied Physics, 1994
- Reliability of 10 nm Stacked Insulator on Polycrystalline Silicon in Planar and Trench CapacitorsJournal of the Electrochemical Society, 1990
- Hopping Conduction and Defect States in Reactively Sputtered Silicon Nitride Thin Filmsphysica status solidi (a), 1986
- A 100A Thick Stacked SiO2/Si3N4/SiO2 Dielectric Layer for Memory Cafacitor8th Reliability Physics Symposium, 1985
- Two components of tunneling current in metal-oxide-semiconductor structuresApplied Physics Letters, 1983
- Charge transport in band tailsThin Solid Films, 1978
- Tunneling of electrons from Si into thermally grown SiO2Solid-State Electronics, 1977