Testing the Temperature Limits of GaN-Based HEMT Devices
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- 13 September 2010
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Device and Materials Reliability
- Vol. 10 (4), 427-436
- https://doi.org/10.1109/tdmr.2010.2072507
Abstract
The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500°C, InAlN/GaN HEMTs have been operated up to 900°C for 50 h (in vacuum). Failure is thought to be still contact metallization stability related, indicating an extremely robust InAlN/GaN heterostructure configuration.Keywords
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