Coulomb blockade memory using integrated single-electron transistor/metal-oxide-semiconductor transistor gain cells
- 1 January 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (12), 2334-2339
- https://doi.org/10.1109/16.887016
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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