A high-speed silicon single-electron random access memory
- 1 November 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (11), 583-585
- https://doi.org/10.1109/55.798051
Abstract
A silicon random access memory using a single-electron tunnelling transistor (SETT) in the form of a multiple tunnel junction (MTJ) in a silicon nanowire has been assessed in terms of its write speed, retention time, and selectivity at an operating temperature of 4.2 K.Keywords
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