High-power single-mode selectively oxidized vertical-cavity surface-emitting lasers
- 1 August 1996
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 8 (8), 971-973
- https://doi.org/10.1109/68.508707
Abstract
Summary form only given. Vertical-cavity surface-emitting lasers (VCSELs) emitting around 980 nm wavelength are of much interest for short distance, high-data-rate optical interconnects. Recently, VCSELs with record high conversion efficiencies of 50% and record low threshold currents of 9 /spl mu/A have been reported, employing selective oxidation of AlAs for current confinement and MOCVD growth with carbon as p-type dopant. In these small diameter devices, the maximum output power was emitted to a few milliwatts. We have fabricated MBE-grown oxidized VCSELs using beryllium as p-type dopant. Nonheatsinked 25 /spl mu/m active diameter lasers with 82% differential quantum efficiency reach maximum output powers of 47 mW and wallplug efficiencies up to 42%.Keywords
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