High efficiency selectively oxidised MBE grown vertical-cavity surface-emitting lasers
- 1 January 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (6), 557-558
- https://doi.org/10.1049/el:19960397
Abstract
The authors have used conventional solid source MBE with Be p-type doping and single layer selective oxidation to produce 20 µm diameter VCSELs (λ = 980 nm) with 47% wallplug efficiency at 10 mW output power and over 40 mW maximum output power in a configuration without heatsinking.Keywords
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