Influence of composition on the electrical and optical properties of Ge20BixSe80−x films
- 1 November 2000
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 376 (1-2), 236-240
- https://doi.org/10.1016/s0040-6090(00)01067-1
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- A model for the chemical modification of electrical properties of chalcogenide glasses by bismuthJournal of Physics C: Solid State Physics, 1987
- Constraint theory and carrier-type reversal in Bi-Ge chalcogenide alloy glassesPhysical Review B, 1987
- Mechanism for Doping in Bi Chalcogenide GlassesPhysical Review Letters, 1986
- Is the n-type conductivity in some Bi-doped chalcogenide glasses controlled by percolation?Solid State Communications, 1985
- Impurity effects of some metals on electrical properties of amorphous As2Se1Te2 filmsJournal of Non-Crystalline Solids, 1983
- Preparation of n-type semiconducting Ge20Bi10Se70 glassApplied Physics Letters, 1979
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- States in the gap and recombination in amorphous semiconductorsPhilosophical Magazine, 1975
- Optical Properties of Semiconductors. II. Infra-Red Transmission of GermaniumPhysical Review B, 1949