Analysis of GeSn-SiGeSn hetero-tunnel FETs
- 1 September 2014
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Among the alloys of Group IV semiconductors the Germanium-Tin (GeSn) alloy is particularly interesting as it exhibits a small and direct band gap for a certain range of Sn content. This feature can be exploited for high-performance tunnel FET (TFET) application. The small direct band gap enhances the band-to-band-tunneling (BTBT) rate which results in a high on-current. In order to reduce the off-state leakage, Silicon-Germanium-Tin (SiGeSn) alloys can be used in the drain region of the TFET. Addition of Si to GeSn increases the band gap of the alloy, thus reducing the ambipolar behavior. Therefore, the GeSn/SiGeSn hetero-structure system is a promising candidate for TFET application. In this work, the performance of GeSn/SiGeSn TFETs is studied by combining the empirical pseudopotential method (EPM) with 2D/3D technology-computer-aided-design (TCAD) simulations of realistic geometries.Keywords
This publication has 16 references indexed in Scilit:
- Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowingApplied Physics Letters, 2013
- Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistorsApplied Physics Letters, 2013
- Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistorsApplied Physics Letters, 2013
- Achieving direct band gap in germanium through integration of Sn alloying and external strainJournal of Applied Physics, 2013
- The direct and indirect bandgaps of unstrained SixGe1−x−ySny and their photonic device applicationsJournal of Applied Physics, 2012
- Extended Quantum Correction Model Applied to Six-Band ${f k}cdot {f p}$ Valence Bands Near Silicon/Oxide InterfacesIEEE Transactions on Electron Devices, 2011
- Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor AlloysPhysical Review Letters, 2009
- Simple analytic model for heterojunction band offsetsPhysical Review B, 1988
- Theory of TunnelingJournal of Applied Physics, 1961
- Zener tunneling in semiconductorsJournal of Physics and Chemistry of Solids, 1960