Interface Trap Generation and Hole Trapping Under NBTI and PBTI in Advanced CMOS Technology With a 2-nm Gate Oxide
- 1 December 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Device and Materials Reliability
- Vol. 4 (4), 715-722
- https://doi.org/10.1109/tdmr.2004.840856
Abstract
This paper gives an insight into the degradation mechanisms during negative and positive bias temperature instabilities in advanced CMOS technology with a 2-nm gate oxide. We focus on generated interface traps and oxide traps to distinguish their dependencies and effects on usual transistor parameters. negative bias temperature instability (NBTI) and positive bias temperature instability in both NMOS and PMOS have been compared and a possible explanation for all configurations has been suggested. Recovery and temperature effect under NBTI were also investigated showing different behaviors of the two components.Keywords
This publication has 26 references indexed in Scilit:
- A thorough investigation of MOSFETs NBTI degradationMicroelectronics Reliability, 2005
- Deep hole trapping effects in the degradation mechanisms of 6.5–2 nm thick gate-oxide PMOSFETsMicroelectronic Engineering, 2004
- Bias temperature instability in scaled p/sup +/ polysilicon gate p-MOSFET'sIEEE Transactions on Electron Devices, 1999
- Positive bias temperature instability in MOSFETsIEEE Transactions on Electron Devices, 1998
- Radiation-induced interface traps in hardened MOS transistors: an improved charge-pumping studyIEEE Transactions on Nuclear Science, 1996
- Impact of Negative-Bias Temperature Instability on the Lifetime of Single-Gate CMOS Structures with Ultrathin (4–6 nm) Gate OxidesJapanese Journal of Applied Physics, 1996
- Generalized diffusion-reaction model for the low-field charge-buildup instability at the Si-interfacePhysical Review B, 1995
- Random telegraph signals in deep submicron n-MOSFET'sIEEE Transactions on Electron Devices, 1994
- Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistorsIEEE Transactions on Electron Devices, 1991
- First-order parameter extraction on enhancement silicon MOS transistorsIEE Proceedings I Solid State and Electron Devices, 1986