Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography
- 15 February 2009
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 311 (5), 1416-1422
- https://doi.org/10.1016/j.jcrysgro.2008.11.017
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC EpilayersMaterials Science Forum, 2008
- Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etchingJournal of Crystal Growth, 2007
- High-resolution x-ray topography of dislocations in 4H-SiC epilayersJournal of Materials Research, 2007
- Simulation of threading dislocation images in X-ray topographs of silicon carbide homo-epilayersJournal of Applied Crystallography, 2005
- Direct observation of dislocations propagated from 4H–SiC substrate to epitaxial layer by X-ray topographyJournal of Crystal Growth, 2003
- Dislocation evolution in 4H-SiC epitaxial layersJournal of Applied Physics, 2002
- Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactorJournal of Crystal Growth, 2002
- Movement of DislocationsPublished by Elsevier BV ,2001