Sulfide passivation of III-V semiconductor surfaces: role of the sulfur ionic charge and of the reaction potential of the solution
- 1 August 1998
- journal article
- Published by Pleiades Publishing Ltd in Technical Physics
- Vol. 43 (8), 983-985
- https://doi.org/10.1134/1.1259113
Abstract
A model is proposed for describing the effect of a solution on the electronic properties of sulfided surfaces of III-V semiconductors which treats the adsorption of sulfur in terms of a Lewis oxide-base interaction. According to this model, the density of states on a sulfided surface, which pin the Fermi level, decreases as the global hardness of the electron shell of the adsorbed sulfide ions is increased. The Thomas-Fermi-Dirac method is used to calculate the global hardness of sulfide ions with different charges as a function of the dielectric constant of the medium. It is shown that the hardness of a sulfur ion is greater when its charge is lower and the dielectric constant of the solvent is lower.Keywords
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