Sulfide passivation of III–V semiconductors: The starting electronic structure of a semiconductor as a factor in the interaction between its valence electrons and the sulfur ion
- 1 May 1995
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 13 (3), 1018-1023
- https://doi.org/10.1116/1.587896