Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth
- 9 February 2021
- journal article
- research article
- Published by Elsevier BV in Applied Surface Science
- Vol. 548, 149272
- https://doi.org/10.1016/j.apsusc.2021.149272
Abstract
No abstract availableFunding Information
- National Natural Science Foundation of China (61874175, 61904172, 61974162, 62034008, 62074140, 62074142)
- Chinese Academy of Sciences (XDB43030101)
- Youth Innovation Promotion Association of the Chinese Academy of Sciences (2019115)
- National Key Research and Development Program of China (2016YFB0400803, 2016YFB0401801, 2017YFB0405001, 2018YFB0406903)
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