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Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift
Home
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Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift
Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift
Désirée Queren
Désirée Queren
Adrian Avramescu
Adrian Avramescu
MS
Marc Schillgalies
Marc Schillgalies
MP
Matthias Peter
Matthias Peter
Tobias Meyer
Tobias Meyer
GB
Georg Brüderl
Georg Brüderl
SL
Stephan Lutgen
Stephan Lutgen
US
Uwe Strauß
Uwe Strauß
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26 May 2009
journal article
review article
Published by
Wiley
in
physica status solidi (c)
Vol. 6
(S2)
,
S826-S829
https://doi.org/10.1002/pssc.200880783
Abstract
No abstract available
Cited by 14 articles