Solution-Doped Polysilicon Passivating Contacts for Silicon Solar Cells
- 16 February 2021
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 13 (7), 8455-8460
- https://doi.org/10.1021/acsami.0c22127
Abstract
In this work, we present a simple and efficient solution-doping process for preparing high-quality polycrystalline silicon (poly-Si)-based passivating contacts. Commercial phosphorus or boron-doping solutions are spin-coated on crystalline silicon (c-Si) wafers that feature SiO2/poly-Si layers; the doping process is then activated by thermal annealing at high temperatures in a nitrogen atmosphere. With optimized n- and p-type solution doping and thermal annealing, n- and p-type poly-Si passivating contacts featuring simultaneously a low contact recombination parameter (J0c) of 2.4 and 12 fA/cm2 and a low contact resistivity (ρc) of 29 and 20 mΩ·cm2 are achieved, respectively. Taking advantage of the single-sided nature of these solution-doping processes, c-Si solar cells with poly-Si passivating contacts of opposite polarity on the respective wafer surfaces are fabricated using a simple coannealing process, achieving the best power conversion efficiency (PCE) of 18.5% on a planar substrate. Overall, the solution-doping method is demonstrated to be a simple and promising alternative to gas/ion implantation doping for poly-Si passivating-contact manufacturing.Funding Information
- Soochow University
- King Abdullah University of Science and Technology (OSR-CRGURF/1/3383)
This publication has 30 references indexed in Scilit:
- Passivating contacts for silicon solar cells based on boron-diffused recrystallized amorphous silicon and thin dielectric interlayersSolar Energy Materials and Solar Cells, 2016
- Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cellsApplied Physics Letters, 2016
- Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO 2 layersSolar Energy Materials and Solar Cells, 2015
- Phosphorus-diffused polysilicon contacts for solar cellsSolar Energy Materials and Solar Cells, 2015
- Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar CellsIEEE Journal of Photovoltaics, 2015
- Carrier-selective contacts for Si solar cellsApplied Physics Letters, 2014
- Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristicsSolar Energy Materials and Solar Cells, 2014
- High efficiency n-type Si solar cells on Al2O3-passivated boron emittersApplied Physics Letters, 2008
- N+ silicon solar cells emitters realized using phosphoric acid as doping source in a spray processThin Solid Films, 2006
- Ohmic contacts for GaAs devicesSolid-State Electronics, 1967