Phosphorus-diffused polysilicon contacts for solar cells
- 19 June 2015
- journal article
- Published by Elsevier BV in Solar Energy Materials and Solar Cells
- Vol. 142, 75-82
- https://doi.org/10.1016/j.solmat.2015.06.001
Abstract
No abstract availableKeywords
Funding Information
- Australian Renewable Energy Agency
This publication has 28 references indexed in Scilit:
- Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristicsSolar Energy Materials and Solar Cells, 2014
- Electrons and holes in solar cells with partial rear contactsProgress In Photovoltaics, 2013
- Nitric acid oxidation of Si to form ultrathin silicon dioxide layers with a low leakage current densityJournal of Applied Physics, 2003
- Polysilicon emitters for bipolar transistors: a review and re-evaluation of theory and experimentIEEE Transactions on Electron Devices, 1992
- Current transport mechanism of polysilicon-emitter transistorMicroelectronics Reliability, 1991
- Demonstration of the importance of the oxide breakup in polysilicon-contacted-emitter modelingIEEE Transactions on Electron Devices, 1991
- A general model for minority carrier transport in polysilicon emittersSolid-State Electronics, 1989
- Interfacial oxide, grain size, and hydrogen passivation effects on polysilicon emitter transistorsIEEE Transactions on Electron Devices, 1988
- Grain boundaries in semiconductorsJournal of Physics C: Solid State Physics, 1985
- Ohmic contacts for GaAs devicesSolid-State Electronics, 1967