Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO 2 layers
- 1 November 2015
- journal article
- Published by Elsevier BV in Solar Energy Materials and Solar Cells
- Vol. 142, 123-127
- https://doi.org/10.1016/j.solmat.2015.06.048
Abstract
No abstract availableKeywords
Funding Information
- German Federal Ministry for Economic Affairs and Energy (0325292, 0325634B)
This publication has 13 references indexed in Scilit:
- Efficient carrier-selective p- and n-contacts for Si solar cellsSolar Energy Materials and Solar Cells, 2014
- Carrier-selective contacts for Si solar cellsApplied Physics Letters, 2014
- Fill Factor Limitation of Silicon Heterojunction Solar Cells by Junction RecombinationEnergy Procedia, 2013
- On the c-Si|a-SiO2 Interface in Hyperthermal Si Oxidation at Room TemperatureThe Journal of Physical Chemistry C, 2012
- Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structuresApplied Surface Science, 2010
- Nitric acid oxidation of Si to form ultrathin silicon dioxide layers with a low leakage current densityJournal of Applied Physics, 2003
- Highly insulating ultrathin SiO2 film grown by photooxidationJournal of Applied Physics, 2003
- X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si (100) Formed by Chemical TreatmentJapanese Journal of Applied Physics, 1996
- High-precision x-ray reflectivity study of ultrathin SiO2 on SiJournal of Vacuum Science & Technology A, 1996
- High-Density Layer at the SiO2/Si Interface Observed by Difference X-Ray ReflectivityJapanese Journal of Applied Physics, 1996