Surface potential in n- and p-GaInP2(100): temperature effect
- 6 May 2021
- journal article
- research article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 54 (18), 185104
- https://doi.org/10.1088/1361-6463/abe270
Abstract
Surface potentials in chemically etched n- and p-GaInP2(100) are investigated by synchrotron-radiation photoemission spectroscopy at room and liquid-nitrogen temperatures. It is found that at low temperature the surface band bending in both n- and p-GaInP2(100) is reduced so that the surface bands become nearly flat. This effect is explained in the framework of semiconductor surface electrostatics. The proposed model enables quantitative characterization of the surface state spectrum based on the experimentally determined values of the surface potential at different temperatures. In particular, the surface states density values obtained are 2 x 10(12) and 7 x 10(12) cm(-2) for n- and p-GaInP2(100) surfaces, respectively.Funding Information
- Russian Foundation for Basic Research (20-03-00523)
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