Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells
Open Access
- 1 January 2014
- journal article
- research article
- Published by Hindawi Limited in International Journal of Photoenergy
- Vol. 2014, 1-10
- https://doi.org/10.1155/2014/836284
Abstract
A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper. The opportunity for successfully applying the combination of reflectance and reflectance anisotropy spectroscopy in situ methods for investigating III-V structure growth on a Ge substrate has been demonstrated. Photovoltaic properties of the III-V/Ge narrow-band subcell of the triple-junction solar cells have been investigated. It has been shown that there are excess currents in the Ge photovoltaic p-n junctions, and they have the tunneling or thermotunneling character. The values of the diode parameters for these current flow mechanisms have been determined. The potential barrier at the III-V/Ge interface was determined and the origin of this barrier formation during MOVPE heterogrowth was suggested.Keywords
Funding Information
- Russian Ministry of Education and Science (14.B25.31.0020)
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