Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions
- 22 February 2021
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 118 (8), 084002
- https://doi.org/10.1063/5.0036643
Abstract
We report depth-resolved photoluminescence measurements of nitrogen-vacancy (NV-) centers formed along the tracks of swift heavy ions (SHIs) in type Ib synthetic single crystal diamonds that had been doped with 100ppm nitrogen during crystal growth. Analysis of the spectra shows that NV- centers are formed preferentially within regions where electronic stopping processes dominate and not at the end of the ion range where elastic collisions lead to the formation of vacancies and defects. Thermal annealing further increases NV yields after irradiation with SHIs preferentially in regions with high vacancy densities. NV centers formed along the tracks of single swift heavy ions can be isolated with lift-out techniques for explorations of color center qubits in quasi-1D registers with an average qubit spacing of a few nanometers and of order 100 color centers per micrometer along 10 to 30-mu m-long percolation chains.Funding Information
- Fusion Energy Sciences (DE-AC02-05CH11231)
- Basic Energy Sciences (DE-AC02-05CH11231)
- Lawrence Berkeley National Laboratory (DE-AC02-05CH11231)
- Academy of Finland (265675)
- EU's Horizon 2020 research and innovation program (730871)
- International Atomic Energy Agency (F11020)
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