Method of full polarization control of microwave fields in a scalable transparent structure for spin manipulation

Abstract

The application of transparent conducting oxides in electronic devices like solar cells or displays is common. By transferring this technology to quantum sensing and computing in the form of microwave conductors, it is possible to benefit from the advantages of these materials. By using indium tin oxide (ITO), it is demonstrated that at an arbitrary position below the conductor, an arbitrary elliptical microwave polarization can be produced by two independent sources. This is independent of the geometry and size of the ITO, whereby a non-resonant microwave approach can be chosen. Using single nitrogen vacancy (NV) centers in diamond in combination with a cross-like ITO structure, each NV center can be addressed with an ideal (clockwise or anticlockwise) microwave polarization. By optimizing the coupling of the microwave field to the NV centers and minimizing the conductor size, the creation of smaller devices compared to common approaches is possible.