Coherent control of single spins in silicon carbide at room temperature
- 1 December 2014
- journal article
- research article
- Published by Springer Science and Business Media LLC in Nature Materials
- Vol. 14 (2), 164-168
- https://doi.org/10.1038/nmat4145
Abstract
Spins in solids are cornerstone elements of quantum spintronics1. Leading contenders such as defects in diamond2,3,4,5 or individual phosphorus dopants in silicon6 have shown spectacular progress, but either lack established nanotechnology or an efficient spin/photon interface. Silicon carbide (SiC) combines the strength of both systems5: it has a large bandgap with deep defects7,8,9 and benefits from mature fabrication techniques10,11,12. Here, we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence times under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology.Keywords
Other Versions
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