Low-resistivity vertical current transport across AlInN/GaN interfaces
Open Access
- 21 December 2020
- journal article
- research article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 60 (1), 010905
- https://doi.org/10.35848/1347-4065/abd1f7
Abstract
Effects of n-type doping of Al0.82In0.18N/GaN heterostructures on the conduction band (CB) profile have been investigated. Doping concentrations well above 1019 cm-3 are required to reduce the large barriers in the conduction band. Experimentally, Si- and Ge donor specie are compared for n-type doping during metalorganic vapor phase epitaxy. For Si doping we find substantial interface resistivity that will strongly contribute to total device resistivity. Doping of AlInN is limited by either the onset of a self-compensation mechanism (Si) or structural degradation of the AlInN (Ge). Only by Ge-doping, purely ohmic behavior of periodic AlInN/GaN layer stacks could be realized.Keywords
Funding Information
- Deutsche Forschungsgemeinschaft (INST 272/265-1)
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