Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors
- 2 May 2011
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 98 (18)
- https://doi.org/10.1063/1.3586767
Abstract
We report on the growth conditions of AlInN layers grown on free-standing GaN substrates. We found that an average indium content of ∼20% is needed to obtain defect-free AlInN/GaN multilayers. This is larger than the commonly accepted value of 18% for lattice-matched condition. A model where tensile strain at the GaN/AlInN interface is induced by indium surface segregation occurring in AlInN layers is proposed to explain this discrepancy. A high In/Al flux ratio is shown to reduce this effect and allowed obtaining a defect-free AlInN/GaN Bragg reflector with a peak reflectivity of 99.6% suitable for vertical cavity light emitting devices.Keywords
Funding Information
- Swiss National Science Foundation (200020-122294, 200021-127195)
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