Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy
- 1 January 2011
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 109 (1), 013703
- https://doi.org/10.1063/1.3527058
Abstract
The valence band offsets, , of , , and heterostructures grown by metal-organic vapor phase epitaxy were evaluated by using x-ray photoelectron spectroscopy (XPS). The dependence of the energy position and the full width at half maximum of the spectrum on the exit angle indicated that there was sharp band bending caused by the polarization-induced electric field combined with surface Fermi-level pinning in each ultrathin InAlN layer. The values evaluated without taking into account band bending indicated large discrepancies from the theoretical estimates for all samples. Erroneous results due to band bending were corrected by applying numerical calculations, which led to acceptable results. The evaluated values were for , for , and for . Despite the large decrease of around 1.0 eV in the band gap of InAlN layers according to the increase in the In molar fraction, the decrease in was as small as 0.2 eV. Therefore, the change in band-gap discontinuity was mainly distributed to that in conduction band offset.
Keywords
This publication has 28 references indexed in Scilit:
- Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxyApplied Physics Letters, 2010
- Arsenic-dominated chemistry in the acid cleaning of InGaAs and InAlAs surfacesApplied Physics Letters, 2008
- In situ study of surface reactions of atomic layer deposited LaxAl2−xO3 films on atomically clean In0.2Ga0.8AsApplied Physics Letters, 2008
- Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)Journal of Applied Physics, 2008
- Corrected electron inelastic mean free paths (IMFPs) for selected wide band semiconductorsJournal of Physics: Conference Series, 2008
- High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructuresApplied Physics Letters, 2006
- InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam EpitaxyJapanese Journal of Applied Physics, 2004
- Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layersPhysical Review B, 1994
- Calculations of electron inelastic mean free paths. V. Data for 14 organic compounds over the 50–2000 eV rangeSurface and Interface Analysis, 1994
- Calculations of electron inelastic mean free paths. III. Data for 15 inorganic compounds over the 50–2000 eV rangeSurface and Interface Analysis, 1991