Multilayer Si shadow mask processing of wafer-scale MoS2 devices
- 1 April 2020
- journal article
- research article
- Published by IOP Publishing in 2D Materials
- Vol. 7 (2), 025019
- https://doi.org/10.1088/2053-1583/ab6b6b
Abstract
Two-dimensional layered materials (2DLMs) have attracted great research interest due to their exotic physical properties and potential applications in nanoelectronics and optoelectronics. Device fabrication with 2DLMs is challenging because their ultrathin characteristic makes them extremely sensitive to the external environment, especially to chemical contamination introduced by optical lithography. The shadow mask technique is a clean alternative in lithography-free electrode patterning for emerging nanomaterials. However, shadow mask assisted fabrication over large areas and multilevel alignment of patterns remain challenging for practical applications. In this paper, we report an over wafer scale shadow mask fabrication technique for 2DLMs. Based on successful fabrication of customized silicon shadow masks with micrometer feature sizes, their advantages for fabricating higher mobility and lower interface trapped exfoliated MoS2 transistors are demonstrated. Meanwhile, applications in large-scale metal deposition and sample etching are also explored. The max alignment error of multilayer patterns fall in 0.5-3.0 mu m in x- and 2.0-9.0 mu m in y-directions. Then this technique is employed to realize a fabrication of MoS2 top-gated field effect transistor arrays with two universal strategies: 'etching-last' and 'channel-first' on 1 x 1 cm(2) Al2O3 substrate. Furthermore, logic inverter circuits with a high gain of 10 are successfully fabricated. The results provide an alternative as a universal, low-cost, time-saving method for fabricating large-scale 2DLM electronics and flexible electronics.Funding Information
- Oversea Researcher Innovation Program of Nanjing, NUPTSF (NY217118, NY219024)
- National key research and development program (2016YFA0203900)
- The Innovation Research Project of Jiangsu Province (CZ007SC19015)
- National Natural Science Foundation of China (11904174, 61874154, 61874060)
- Natural Science Foundation of Jiangsu Province (BK20181388, BK20190729)
- Science and Technology Commission of Shanghai Municipality (18JC1410300)
- Natural Science Foundation of the Jiangsu Higher Education Institutions of China (19KJB510047)
This publication has 47 references indexed in Scilit:
- The effects of supercritical CO2 formulations on the removal of high-dose ion-implanted photoresistsMicroelectronic Engineering, 2013
- Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2Nano Letters, 2013
- From Bulk to Monolayer MoS2: Evolution of Raman ScatteringAdvanced Functional Materials, 2012
- High-Throughput Nanofabrication of Infrared Plasmonic Nanoantenna Arrays for Vibrational NanospectroscopyNano Letters, 2010
- Stripping and Cleaning of High-Dose Ion-Implanted Photoresists Using a Single-Wafer, Single-Chamber Dry/Wet Hybrid SystemSolid State Phenomena, 2009
- Large-scale synthesis of copper nanoparticles by chemically controlled reduction for applications of inkjet-printed electronicsNanotechnology, 2008
- Microstenciling: A Generic Technology for Microscale Patterning of Vapor Deposited MaterialsJournal of Microelectromechanical Systems, 2004
- Dynamic Shadow Mask Technique: A Universal Tool for NanoscienceNano Letters, 2004
- A silicon shadow mask for deposition on isolated areasJournal of Micromechanics and Microengineering, 2000
- Nanofabrication using a stencil maskApplied Physics Letters, 1999