The reverse bias current–voltage–temperature (I–V–T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80–380 K
- 30 January 2021
- journal article
- research article
- Published by Springer Science and Business Media LLC in Journal of Materials Science: Materials in Electronics
- Vol. 32 (5), 5624-5634
- https://doi.org/10.1007/s10854-021-05284-z
Abstract
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